U1DL49
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
U1DL49
SWITCHING MODE POWER SUPPLY APPLICATIONS
l
Repetitive Peak Reverse Voltage : V
RRM
= 200V
l
Average Forward Current
l
Low Forward Voltage
: I
F (AV)
= 1.0A
: V
FM
= 0.98V (Max)
l
Very Fast Reverse鈭扲ecovery Time : t
rr
= 60ns (Max)
l
Available to Reduce Switching Losses and Output Noise
Unit: mm
MAXIMUM RATINGS
(Ta = 25擄C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non鈭扲epetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
200
1.0
15 (50Hz)
16.5 (60Hz)
鈭?0~150
鈭?0~150
UNIT
V
A
A
擄C
擄C
JEDEC
JEITA
TOSHIBA
Weight: 0.05g
MIN
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TYP.
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3鈭?E1A
ELECTRICAL CHARACTERISTICS
(Ta = 25擄C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
(Note 1)
(Note 2)
SYMBOL
V
FM
I
RRM
t
rr
t
fr
R
th (j鈭抋)
TEST CONDITION
I
FM
= 1.0A
V
RRM
= 200V
I
F
= 1A, di / dt =
鈭?0A
/ 碌s
I
F
= 1.0A
Junction to Ambient
MAX
0.98
10
60
100
125
UNIT
V
碌A(chǔ)
ns
ns
擄C / W
Note 1: t
rr
TEST CIRCUIT
Note 2: t
fr
TEST CIRCUIT
MARKING
WAVEFORM
WAVEFORM
CODE
RD
TYPE
U1DL49
1
2001-07-11
U1DL49相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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英文版
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JU...
TOSHIBA
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英文版
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JU...
TOSHIBA [T...
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英文版
SWITCHING TYPE POWER SUPPLY APPLICATIONS
Toshiba
1
2
3
