U1898
U1898
N-Channel Switch
鈥?This device is designed for low level analog switching, sample and
hold circuits and chopper stabalized amplifiers.
鈥?Sourced from Process 51.
鈥?See J111 for characteristics.
TO-92
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
40
-40
50
-55 ~ 150
Units
V
V
mA
擄C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GS
V
GS(off)
I
DGO
I
DSS
r
DS(on)
Small Signal Characteristics
r
ds(on)
C
iss
C
rss
t
on
t
off
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V
DS
= VGS = 0, f= 1.0 kHz
V
DS
= 20, V
GS
= 0, f = 1.0 MHz
V
GS
= - 20 V, f = 1.0 MHz
I
D(on)
= 6.0 mA
V
GS(off)
= 6.0 V
50
16
5.0
35
60
鈩?/div>
pF
pF
ns
ns
Parameter
Test Condition
I
G
= 1.0
碌A(chǔ),
V
DS
= 0
V
DS
= 20 V, I
D
= 1.0 nA
V
DG
= 20 V, I
S
= 0
V
DS
= 20 V, V
GS
= 0
I
D
= 1.0 mA, V
GS
= 0
15
50
Min.
-40
-2.0
-7.0
-200
Max.
Units
V
V
pA
mA
鈩?/div>
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Drain-Gate Leakage Current
Zero-Gate Voltage Drain Current *
On Characteristics
Switching Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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