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TXDV612 Datasheet

  • TXDV612

  • ALTERNISTORS

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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TXDV 412 ---> 812
ALTERNISTORS
.
.
.
FEATURES
VERY HIGH COMMUTATION : > 42.5 A/ms
(400Hz)
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
dV/dt : 500 V/碌s min
DESCRIPTION
The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
RMS on-state current
(360擄 conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25擄C )
Parameter
A1
A2
G
TO220AB
(Plastic)
Value
Tc = 90
擄C
12
Unit
A
ITSM
tp = 2.5 ms
tp = 8.3 ms
tp = 10 ms
170
125
120
72
20
100
- 40 to + 150
- 40 to + 125
260
A
I2t
dI/dt
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/碌s
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
A2s
A/碌s
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
擄C
擄C
擄C
Symbol
Parameter
412
Repetitive peak off-state voltage
Tj = 125
擄C
400
TXDV
612
600
812
800
Unit
VDRM
VRRM
March 1995
V
1/5

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