TVSF0603
T
RANSIENT
P
ROTECTION
P
RODUCTS
鈥淔emtoFarad鈥?Polymer ESD Suppressor
DESCRIPTION
KEY FEATURES
W W W.
Microsemi
.COM
The 鈥淔emtoFarad鈥?product family is specifically for ESD
bidirectional
protection of
vulnerable electronic components, especially at IO ports. Continued shrinking of on-
chip component geometries of sub-micron sizes have reduced levels of ESD at which
upset and failure occurs to the extent that protection is mandatory for reliability of
power and data line interfaces. The sub-picofarad capacitance of this series provides
excellent performance up through six GHz with minimal attenuation without linear
or harmonic distortion well into the GHz range. In the off-state, this FemtoFarad,
polymeric based technology is virtually invisible to circuit performance. Its proven
structure is thick film on a rugged ceramic base that is ideal for automated assembly.
Subsequent paragraphs and charts describe the outstanding performance and
reliability of FemtoFarad components and many other features that make them the
designer鈥檚 choice for ESD protection.
Exceeds surge per IEC 61000-4-2
Small 0603 footprint
Linear performance at MHz levels
Ultra-low capacitance
Ultra-low-standby current
Fast response time
Bidirectional
Lead-free plated terminals
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
High speed data line protection
Low signal distortion/attenuation
ESD protection for mobile/cell
phones
Protects sensitive high frequency
components
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Part Ratings and Characteristics
Performance Characteristics
Continuous dc operating voltage
3
Clamping voltage
4
Trigger voltage
5
ESD Threat voltage capability
Capacitance (@ 1 MHz)
Standby current (@ 12 V)
3, 5
Peak current
Operating temperature
3
ESD pulse withstand
Notes:
Min
-
-
-
-
-
0.01
-
-56
20
Typ
-
35
125
8
0.15
<0.1
30
+25
2
>500
Max
24
60
-
15
0.25
-
45
+85
-
Units
V
V
V
kV
pF
nA
A
擄C
# pulses
1. Continuous operation with 12 volts or more under extreme temperature and humidity may cause increasing leakage current and/or shifting
device resistance. However, even under severe environmental test, characteristics of the device did not change up to 6 V dc operation.
2. Some shifting in characteristics may occur when tested over several hundred ESD pulses at very rapid rate of 1 pulse per second or faster.
3.
Per IEC 61000-4-2, 30 A @ 8 kV, level 4, clamp measurement made 30 ns after initiation of pulse, all tests in contact discharge mode.
4. Trigger measurement made using Transmission Line Pulse (TLP) method.
5.
FemtoFarad devices are capable of withstanding up to a 15 kV, 45 A ESD pulse. Device ratings are given at 8 kV per Note 1, unless
otherwise specified.
TVSF0603
TVSF0603
Environmental Specifications:
鈥?/div>
Moisture Resistance, steady state: MIL-STD-883, method 1004.7, 85% RH, 85潞C, 240 hrs.
鈥?/div>
Thermal shock: MIL-STD-202, Method 107G, -65擄C to 125擄C, 30 min. cycle, 10 cycles
鈥?/div>
Vibration: MIL-STD-202F, Method 201A,(10 to 55 to 10 Hz, 1 min. cycle, 2 hrs each in X-Y-Z)
鈥?/div>
Chemical resistance: ASTM D-543, 4 hrs @ 40擄C, 3 solutions (H2O, detergent solution, defluxer)
鈥?/div>
Operating temperature characteristics, measurement at +25擄C, +85擄C and 鈥?6擄C
鈥?/div>
Full load voltage: 14.4 V dc, 1000 hrs, 25擄C
鈥?/div>
Solder leach resistance and terminal adhesion: Per EIA-576
鈥?/div>
Solderability: MIL-STD-202, Method 208 (95% coverage)
Copyright
錚?/div>
2004
TVSF0603.PDF
02-04-2004 REV A
Microsemi
Transient Protection Products Group
8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
http://www.microsemi.com/tvs
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