TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
Unit: mm
Average Forward Current: I
F (AV)
= 0.5 A (Ta = 65擄C)
Repetitive Peak Reverse Voltage: V
RRM
= 100, 400, 600 V
Reverse Recovery Time: t
rr
= 2.0 碌s
路
路
路
Maximum Ratings
(Ta
=
25擄C)
Characteristics
TVR1B
Repetitive peak reverse
voltage
TVR1G
TVR1J
Average forward current (Ta
=
65擄C)
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
I
F (AV)
I
FSM
T
j
T
stg
V
RRM
Symbol
Rating
100
400
600
0.5
10 (50 Hz)
-40~125
-40~125
A
A
擄C
擄C
V
Unit
JEDEC
JEITA
TOSHIBA
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鈥?/div>
3-3C1A
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Symbol
V
FM
I
RRM
t
rr
(1)
t
rr
(2)
Test Condition
I
FM
=
0.5 A
V
RRM
=
Rated
I
F
=
20 mA, I
R
=
1 mA
I
F
=
100 mA, I
R
=
100 mA
Weight: 0.3 g (typ.)
Min
戮
戮
戮
戮
Typ.
戮
戮
戮
0.3
Max
1.2
10
2.0
戮
Unit
V
mA
ms
Marking
Type Code Lot No.
Color: Silver
Month of
manufac-
ture
Year of
manufac-
ture
Cathode Mark
January to December
are denoted by letter A
to L respectively.
Last decimal digit of
the year of
manufacture
VR
1J
Code
VR1B
VR1G
VR1J
Type
TVR1B
TVR1G
TVR1J
1
2002-09-18
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