TVR-20
HIGH VOLTAGE FAST RECOVERY
SILICON DIODE FOR CRT APPLICATIONS
TYPE - TVR20
This high voltage fast recovery diode was developed for assembly or encapsulation and
is intended primarily for use as a building block in the assembly of high voltage circuits
for black / white TV and similar service.
ABSOLUTE MAXIMUM RATINGS
Peak Reverse Voltage -
Repetitive
V
RWM
max.
I
F
(AV)max.
I
FRM
max.
T
A
T
STG
20,000 Volts
10 mA
200 mA
+100
o
C
-55
o
C to +150
o
C
*
*
Average Forward Current
Peak Forward Current
- Repetitive
**
Operating Temperature
Storage Temperature Range
* Pulse rectifier service -TV deflection system, duty cycle approximately 15% of one
horizontal cycle Approximately 10 sec at a repetition rate of 15,750 Hz
** See Figure 2 (over)
ELECTRICAL CHARACTERISTICS (
@
T
A
=25
o
C, Unless Otherwise indicated.)
Forward Voltage VF @ IF =5mA
30V max.
1uA max.
10uA max.
100 nanosec max.
3A
*
*
Reverse Current IR @ VR =20KV
Reverse Current @ TA= 100
o
C, IR @ VR =20KV
Reverse Recovery time (Fig.3) t rr
Max. Surge Current
*
Tested in suitable dielectric medium
EDI reserves the right to change these specifications at any time without notice.
1
2
