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TT285N Datasheet

  • TT285N

  • SCR / Diode Modules

  • 12頁

  • ETC

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N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT285N
TT285N
Kenndaten
TD285N
DT285N
Elektrische Eigenschaften / Electrical properties
H枚chstzul盲ssige Werte / Maximum rated values
Periodische Vorw盲rts- und R眉ckw盲rts-Spitzensperrspannung T
vj
= -40擄C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorw盲rts-Sto脽spitzensperrspannung
non-repetitive peak forward off-state voltage
R眉ckw盲rts-Sto脽spitzensperrspannung
non-repetitive peak reverse voltage
Durchla脽strom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Sto脽strom-Grenzwert
surge current
Grenzlastintegral
I虜t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 92擄C
T
vj
= 25 擄C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 擄C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/碌s
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
Charakteristische Werte / Characteristic values
Durchla脽spannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Z眉ndstrom
gate trigger current
Z眉ndspannung
gate trigger voltage
Nicht z眉ndender Steuerstrom
gate non-trigger current
Nicht z眉ndende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorw盲rts- und R眉ckw盲rts-Sperrstrom
forward off-state and reverse current
Z眉ndverzug
gate controlled delay time
T
vj
= -40擄C... T
vj max
T
vj
= +25擄C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I虜t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1300
1400 V
1600 V
1400 V
1600 V
1500 V
1700 V
450 A
285 A
9100 A
8000 A
414000 A虜s
320000 A虜s
250 A/碌s
1000 V/碌s
T
vj
= T
vj max
, i
T
= 800 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25擄C, v
D
= 6 V
T
vj
= 25擄C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25擄C, v
D
= 6 V, R
A
= 5
鈩?/div>
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
1,48 V
0,8 V
0,65 m鈩?/div>
max.
max.
max.
max.
max.
max.
max.
max.
max.
200 mA
2 V
10 mA
5 mA
0,2 V
300 mA
1200 mA
70 mA
3 碌s
T
vj
= 25擄C, v
D
= 6 V, R
GK
鈮?/div>
10
鈩?/div>
I
L
i
GM
= 1 A, di
G
/dt = 1 A/碌s, t
g
= 20 碌s
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 擄C,i
GM
= 1 A, di
G
/dt = 1 A/碌s
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
24.09.02
1
BIP AC / SDB-MA/19.08.96 A.R眉ther
A 126/96
Seite/page
1/12

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