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TT210N Datasheet

  • TT210N

  • SCR / Diode Modules

  • 12頁

  • ETC

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N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT210N
TT210N
Kenndaten
TD210N
TD210N...-A
DT210N
TD210N...-K
Elektrische Eigenschaften / Electrical properties
H枚chstzul盲ssige Werte / Maximum rated values
Periodische Vorw盲rts- und R眉ckw盲rts-Spitzensperrspannung T
vj
= -40擄C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorw盲rts-Sto脽spitzensperrspannung
non-repetitive peak forward off-state voltage
R眉ckw盲rts-Sto脽spitzensperrspannung
non-repetitive peak reverse voltage
Durchla脽strom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Sto脽strom-Grenzwert
surge current
Grenzlastintegral
I虜t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85擄C
T
C
= 73擄C
T
vj
= 25 擄C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 擄C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/碌s
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40擄C... T
vj max
T
vj
= +25擄C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
1600
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I虜t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1600
1300
1700
1400 V
1800 V
1400 V
1800 V
1500 V
1900 V
410 A
210 A
261 A
6600 A
5800 A
218000 A虜s
168000 A虜s
150 A/碌s
1000 V/碌s
Charakteristische Werte / Characteristic values
Durchla脽spannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Z眉ndstrom
gate trigger current
Z眉ndspannung
gate trigger voltage
Nicht z眉ndender Steuerstrom
gate non-trigger current
Nicht z眉ndende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorw盲rts- und R眉ckw盲rts-Sperrstrom
forward off-state and reverse current
Z眉ndverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 700 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25擄C, v
D
= 6 V
T
vj
= 25擄C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25擄C, v
D
= 6 V, R
A
= 5
鈩?/div>
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
1,65 V
1 V
0,85 m鈩?/div>
max.
max.
max.
max.
max.
max.
max.
max.
max.
200 mA
2 V
10 mA
5 mA
0,2 V
300 mA
1200 mA
50 mA
3 碌s
T
vj
= 25擄C, v
D
= 6 V, R
GK
鈮?/div>
10
鈩?/div>
I
L
i
GM
= 1 A, di
G
/dt = 1 A/碌s, t
g
= 20 碌s
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 擄C,i
GM
= 1 A, di
G
/dt = 1 A/碌s
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
03.04.02
1
BIP AC / Warstein,den 03.04.85 B枚sterling
A4 /82
Seite/page
1/12

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