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TSUS540 Datasheet

  • TSUS540

  • GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package

  • 6頁

  • VISHAY   VISHAY

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TSUS540.
Vishay Telefunken
GaAs Infrared Emitting Diodes in 酶 5 mm (T鈥?
戮
)
Package
Description
TSUS540. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue鈥揼rey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and photo-
transistors.
94 8390
Features
D
D
D
D
D
D
D
D
D
Low cost emitter
Low forward voltage
High radiant power and radiant intensity
Suitable for DC and high pulse current operation
Standard T鈥?
戮
(酶 5 mm) package
Comfortable angle of half intensity
蠒
=
鹵
22
擄
Peak wavelength
l
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation
angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
150
300
2.5
210
100
鈥?5...+100
鈥?5...+100
260
375
Unit
V
mA
mA
A
mW
擄
C
擄
C
擄
C
擄
C
K/W
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
t
x
5sec, 2 mm from case
Document Number 81056
Rev. 2, 20-May-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (6)

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