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TSUS5202 Datasheet

  • TSUS5202

  • IR LED IM PLASTIKGEHAEUSE 35GRAD 950NM

  • 6頁

  • ETC

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上傳產品規(guī)格書

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TSUS520.
GaAs Infrared Emitting Diodes in 酶 5 mm (T鈥?
戮
) Package
Description
TSUS520. series are infrared emitting diodes in standard
GaAs on GaAs technology, molded in a clear, blue鈥揼rey
tinted plastic package. The devices are spectrally
matched to silicon photodiodes and phototransistors.
94 8390
Features
D
D
D
D
D
D
D
D
D
Low cost emitter
Low forward voltage
High radiant power and radiant intensity
Suitable for DC and high pulse current operation
Standard T鈥?
戮
(酶 5 mm) package
Angle of half intensity
蠒
=
鹵
15
擄
Peak wavelength
l
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in com-
bination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
150
300
2.5
210
100
鈥?5...+100
鈥?5...+100
260
375
Unit
V
mA
mA
A
mW
擄
C
擄
C
擄
C
擄
C
K/W
t
p
/T=0.5, t
p
=100
m
s
t
p
=100
m
s
t 5sec, 2 mm from case
x
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (6)

TSUS5202 產品屬性

  • Vishay

  • 紅外發(fā)射源

  • 950 nm

  • 280 mW/sr

  • + 100 C

  • - 55 C

  • T-1 3/4

  • Bulk

  • Infrared

  • Circular

  • 210 mW

  • 4000

  • 15 deg

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