鈥?/div>
Outstanding high radiant power
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity
蠒
= 鹵 12擄
Peak wavelength
位
p
= 950 nm
High reliability
Matched Phototransistor series: TEMT1000
Versatile terminal configurations
TSML1040
16852
Applications
For remote control
Photointerrupters
Punched tape readers
Encoder
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
鈮?/div>
5sec
t
p
/T = 0.5, t
p
= 100
碌s
t
p
= 100
碌s
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.0
190
100
- 40 to + 85
- 40 to + 100
<260
400
Unit
V
mA
mA
A
mW
擄C
擄C
擄C
擄C
擄C
Basic Characteristics
T
amb
= 25 擄C, unless otherwise specified
T
amb
= 25 擄C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
Test condition
I
F
= 20 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
碌s
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA, t
p
= 20 ms
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
3
25
7
Min
Typ.
1.2
2.6
- 1.85
10
Max
1.5
Unit
V
V
mV/K
碌A(chǔ)
pF
mW/sr
Document Number 81033
Rev. 6, 21-May-03
www.vishay.com
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