鈥?/div>
Suitable for high pulse current operation
Angle of half intensity
蠒
= 鹵 17擄
Peak wavelength
位
p
= 870 nm
Longterm reliability
Matched with PIN Photodiode TEMD1000
Versatile terminal configurations
16758
Applications
IrDA compatible data transmission
Miniature light barrier
For control and drive circuits
Photointerrupters
Incremental sensors
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
鈮?/div>
5sec
t
p
/T = 0.5, t
p
= 100
碌s
t
p
= 100
碌s
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
0.8
190
100
- 40 to + 85
- 40 to + 100
<260
400
Unit
V
mA
mA
A
mW
擄C
擄C
擄C
擄C
K/W
Basic Characteristics
T
amb
= 25 擄C, unless otherwise specified
T
amb
= 25 擄C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Test condition
I
F
= 20 mA
I
F
= 1 A, t
p
= 100
碌s
I
F
= 1.0mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
Symbol
V
F
V
F
TK
VF
I
R
C
j
160
Min
Typ.
1.3
2.4
- 1.7
10
Max
1.5
Unit
V
V
mV/K
碌A(chǔ)
pF
Document Number 81061
Rev. 6, 21-May-03
www.vishay.com
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