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TSM7311D Datasheet

  • TSM7311D

  • 20V Dual N-Channel MOSFET w/ESD Protected

  • 5頁

  • TSC

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TSM7311D
20V Dual N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6. Drain 2
7, 8. Drain 1
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6.5A =22m鈩?/div>
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.5A =30m鈩?/div>
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Block Diagram
Ordering Information
Part No.
TSM7311DCS
Packing
Tape & Reel
2,500/per reel
Package
SOP-8
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Maximum Power Dissipation
Ta = 25
o
C
Ta = 70
o
C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
J
, T
STG
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
20V
鹵 12
6.5
30
2.0
1.3
+150
- 55 to +150
Unit
V
V
A
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
R
胃jf
R
胃ja
Limit
35
62.5
Unit
o
o
C/W
C/W
TSM7311D
1-1
2003/12 rev. A

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