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TSM55N03CP Datasheet

  • TSM55N03CP

  • N-Channel Enhancement Mode MOSFET

  • 3頁

  • TSC

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TSM55N03
Pin assignment:
1. Gate
2. Drain
3. Source
Preliminary
N-Channel Enhancement Mode MOSFET
V
DS
= 25V
I
D
= 55A
R
DS (on)
, Vgs @ 10V, Ids @ 30A = 6m鈩?/div>
R
DS (on)
, Vgs @ 4.5V, Ids @ 30A = 9m鈩?/div>
Features
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Improved Shoot-Through FOM
Fully Characterized Avalanche Voltage and Current
Specially Designed for DC/DC Converters and Motor
Drivers
Block Diagram
Ordering Information
Part No.
TSM55N03CP
Packing
Tape & Reel
Package
TO-252
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25鈩?
T
A
= 25
o
C
T
A
= 75
o
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
J
, T
STG
E
AS
Limit
25
鹵20
55
350
70
42
+150
- 55 to +150
300
Unit
V
V
A
W
W/
o
C
o
o
C
C
mJ
Thermal Performance
Parameter
Lead Temperature (1/8鈥?from case)
Junction-to-case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in
2
2oz Cu PCB board
Symbol
T
L
R
胃jc
R
胃ja
Limit
10
1.8
40
Unit
S
o
C/W
TSM55N03
1-3
2005/04 rev. B

TSM55N03CP 產(chǎn)品屬性

  • Taiwan Semiconductor

  • Reel

  • 2500

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