, Vgs @ 5V, Ids @ 50mA = 13.5鈩?/div>
Features
Advanced trench process technology
High density cell design for low on-resistance
High input impedance
High speed switching
No minority carrier storage time
CMOS logic compatible input
No secondary breakdown
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2N7002CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25
o
C
Ta > 25 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
J
, T
STG
o
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
60
鹵 20
115
800
225
1.8
+150
- 55 to +150
Unit
V
V
mA
mA
mW
MW/ C
o
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8鈥?from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
T
L
R
胃ja
Limit
5
417
Unit
S
o
C/W
TSM2N7002
1-3
2003/12 rev. B