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TSHG620 Datasheet

  • TSHG620

  • High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double He...

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TSHG6200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double
Hetero
Description
TSHG6200 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
The new technology combines high speed with high
radiant power at wavelength of 850 nm.
Features
鈥?High modulation bandwidth
鈥?Extra high radiant power and radiant intensity
鈥?Low forward voltage
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Suitable for high pulse current operation
Standard package T-1戮 (鈭?5 mm)
Angle of half intensity
蠒
= 鹵 10擄
Peak wavelength
位
p
= 850 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 8390
Applications
Infrared radiation source for CMOS cameras
(illumination). High speed IR data transmission.
Parts Table
Part
TSHG6200
Remarks
MOQ: 4000 pc
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Reverse Voltage
Forward current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
鈮?/div>
5 sec, 2 mm from case
t
p
/T = 0.5, t
p
= 100
碌s
t
p
= 100
碌s
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1
250
100
- 40 to + 85
- 40 to + 100
260
300
Unit
V
mA
mA
A
mW
擄C
擄C
擄C
擄C
K/W
Basic Characteristics
T
amb
= 25 擄C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Document Number 81078
Rev. 1.3, 08-Mar-05
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
碌s
I
F
= 100 mA
Symbol
V
F
V
F
TK
VF
Min
Typ.
1.5
2.3
-2.1
Max
1.8
Unit
V
V
mV/K
www.vishay.com
1

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