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TSFF5200 Datasheet

  • TSFF5200

  • High Speed IR Emitting Diode in ? mm (T-13/4) Package

  • 6頁

  • VISHAY   VISHAY

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TSFF5200
Vishay Telefunken
High Speed IR Emitting Diode in 酶5 mm (T鈥?
戮
)
Package
Description
TSFF5200 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH鈥?/div>
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology.
94 8390
Features
D
D
D
D
D
D
D
D
D
High modulation bandwidth (35 MHz)
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T鈥?
戮
(酶 5 mm) package
Angle of half intensity
蠒
=
鹵
10
擄
Peak wavelength
l
p
= 870 nm
High reliability
Good spectral matching to Si photodetectors
Applications
IInfrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
300
1
250
100
鈥?5...+85
鈥?5...+85
260
300
Unit
V
mA
mA
A
mW
擄
C
擄
C
擄
C
擄
C
K/W
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
t
x
5sec, 2 mm from case
Document Number 81060
Rev. 2, 29-Jun-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (6)

TSFF5200 產(chǎn)品屬性

  • Vishay

  • 870 nm

  • 10 deg

  • 1600 mW/sr

  • + 85 C

  • - 25 C

  • T-1 3/4

  • Bulk

  • Infrared

  • Circular

  • Through Hole

  • 1.6 V

  • 250 mW

  • 4000

  • 10 deg

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