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TSDF2005W Datasheet

  • TSDF2005W

  • 25 GHz Silicon NPN Planar RF Transistor

  • 61.04KB

  • 5頁(yè)

  • VISHAY   VISHAY

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TSDF2005W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low current, low鈥搉oise applications, such as in RF
front鈥揺nds, in analogue and digital cellular and
cordless phones,in analogue and digital TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
D
Very low noise figure
D
Very high power gain
D
High transition frequency f
T
= 25 GHz
D
Low feedback capacitance
D
Emitter pins are thermal leads
1
2
4
3
TSDF2005W Marking: YH2
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
16712
Absolute Maximum Ratings
T
amb
= 25擄C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
碌m
Cu
T
amb

132
擄C
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
R
thJA
Value
10
3.5
1.5
12
40
150
鈥?5 to +150
450
Unit
V
V
V
mA
mW
擄C
擄C
K/W
Document Number 85085
Rev. 3, 02鈥揗ay鈥?2
www.vishay.com
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