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TSDF1920W Datasheet

  • TSDF1920W

  • 25 GHz Silicon NPN Planar RF Transistor

  • 56.53KB

  • 4頁(yè)

  • VISHAY   VISHAY

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TSDF1920W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For RF front鈥揺nds, low noise, and wideband
applications, such as in analogue and digital cellular
and cordless phones (DECT, PHD), in TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
D
Very low noise figure
D
Very high power gain
D
High transition frequency f
T
= 24 GHz
D
Low feedback capacitance
D
Emitter pins are thermal leads
1
2
4
3
TSDF1920W Marking: YH3
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
16712
Absolute Maximum Ratings
T
amb
= 25擄C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
碌m
Cu
T
amb

60
擄C
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
R
thJA
Value
10
3.5
1.5
40
200
150
鈥?5 to +150
450
Unit
V
V
V
mA
mW
擄C
擄C
K/W
Document Number 85092
Rev. 2, 02鈥揗ay鈥?2
www.vishay.com
1 (4)

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