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TSDF1205W Datasheet

  • TSDF1205W

  • Silicon NPN Planar RF Transistor

  • 6頁

  • VISHAY   VISHAY

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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and micro-
wave frequencies.
Features
D
Low power applications
D
Very low noise figure
D
High transition frequency f
T
= 12 GHz
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
TSDF1205 Marking: F05
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
1
2
13 653
13 566
13 654
13 566
3
4
4
3
TSDF1205W Marking: WF0
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
4
2
12
40
150
鈥?5 to +150
Unit
V
V
V
mA
mW
擄
C
擄
C
T
amb
鈮?/div>
132
擄
C
Document Number 85065
Rev. 5, 30-Jun-00
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (6)

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