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TSD57045 Datasheet

  • TSD57045

  • RF POWER TRANSISTORS The LdmoSTFAMILY

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
SD57045
RF POWER TRANSISTORS
The
LdmoST
FAMILY
ADVANCE DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 45 W PEP with 13 dB gain @ 945 MHz
BeO FREE PACKAGE
M243
(Epoxy Sealed)
ORDER CODE
SD57045
BRANDING
TSD57045
DESCRIPTION
The SD57045 is a common source N-Channel
Enhancement-Mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57045 is designed for high gain
and broadband performance operating in
common source mode at 28V. It is ideal for base
stations applications requiring high linearity.
PIN CONNECTION
1. Drain
2. Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain-Gate Voltage (R
GS
= 1 M鈩?
Gate-Source Voltage
Drain Current
Power Dissipation (@ T c = 70 C)
Max. O perating Junction Temperature
Storage Temperature
o
3.Source
Value
65
65
鹵
20
5
93
200
-65 to 200
Uni t
V
V
V
A
W
o
o
C
C
THERMAL DATA
(T
case
= 70
o
C)
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
1.4
0.45
o
o
C/W
C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
1/11

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