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TSD57030 Datasheet

  • TSD57030

  • RF POWER TRANSISTORS The LdmoST FAMILY

  • 7頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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SD57030
RF POWER TRANSISTORS
The
LdmoST
FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 30 W WITH 13 dB gain @ 945 MHz
鈥?/div>
BeO FREE PACKAGE
M243
(Epoxy Sealed)
ORDER CODE
SD57030
BRANDING
TSD57030
DESCRIPTION
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M鈩?
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
65
+
20
4
74
200
-65 to + 200
Unit
V
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.75
擄C/W
1/7
March, 24 2003

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