Ordering number :EN5962
NPN Triple Diffused Planar Silicon Transistor
TS7994
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
鈥?High speed.
鈥?High breakdown voltage (VCBO=1600V).
鈥?High reliability (Adoption of HVP process).
鈥?Adoption of MBIT process.
Package Dimensions
unit:mm
2048B-TO3PBL
[TS7994]
6.0
20.0
酶3.3
5.0
26.0
2.0
3.4
20.7
2.0
1.0
0.6
1.2
5.45
5.45
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25藲 C
Tj
Tstg
Conditions
Ratings
1600
800
6
25
50
3.5
210
150
鈥?5 to +150
Unit
V
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
ICES
VCE=1600V, RBE=0
800
1.0
10
15
4
30
7
5
1.5
3.0
0.2
V
V
碌s
碌s
Conditions
Ratings
min
typ
max
1.0
Unit
mA
V
mA
碌A(chǔ)
VCEO
(SUS)
IC=100mA, IB=0
IEBO
VEB=4V, IC=0
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=18A
IC=18A, IB=4.5A
IC=18A, IB=4.5A
IC=15A, IB1=2.5A, IB2=鈥?.25A
IC=15A, IB1=2.5A, IB2=鈥?.25A
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1622 No.5962-1/3
2.8
1
2
3
1:Base
2:Collector
3:Emitter
SANYO:TO-3PBL
1
2
3
