Ordering number :EN5959
NPN Triple Diffused Planar Silicon Transistor
TS7988
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
鈥?High speed.
鈥?High breakdown voltage (VCBO=1600V).
鈥?High reliability (Adoption of HVP process).
鈥?Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7988]
酶3.4
16.0
5.6
3.1
5.0
8.0
21.0
22.0
4.0
2.8
2.0
2.0
20.4
1.0
0.6
1
2
3
5.45
5.45
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25藲 C
Tj
Tstg
Conditions
Ratings
1600
800
6
10
25
3.0
70
150
鈥?5 to +150
Unit
V
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
ICBO
ICES
VCE=800V, IE=0
VCE=1600V, RBE=0
800
1.0
15
4
30
7
5
1.5
3.0
0.2
V
V
碌s
碌s
Conditions
Ratings
min
typ
max
10
1.0
Unit
碌A(chǔ)
mA
V
mA
VCEO(sus) IC=100mA, IB=0
IEBO
VEB=4V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCE=5V, IC=1.0A
VCE=5V, IC=7A
IC=7A, IB=1.75A
IC=7A, IB=1.75A
IC=6A, IB1=1.0A, IB2=鈥?.5A
IC=6A, IB1=1.0A, IB2=鈥?.5A
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1619 No.5959-1/3
3.5
2.0
1
2
3
