Excellent transient characteristics.
鈥?/div>
Adoption of FBET process.
Absolute Maximum Ratings / Ta=25擄C
Gate to Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
V
GDO
I
G
I
D
P
D
Tj
Tstg
--20
10
1
100
150
--55to+150
min
--20
--0.2
140g
0.4
unit
V
mA
mA
mW
擄C
擄C
typ
--0.6
1.2
4.1
0.88
max
--1.5
500g
unit
V
V
碌A(chǔ)
mS
pF
pF
Electrical Characteristics / Ta=25擄C
G-D Breakdown Voltage
V
( BR)GDO
I
G =--
100碌A(chǔ)
V
GS(
off
)
V
DS=
5V, I
D=
1碌A(chǔ)
Cutoff Voltage
I
DSS
V
DS=
5V, V
GS=
0
Drain Current
| Yfs |
V
DS=
5V, V
GS=
0, f=1kHz
Forward Transfer Admittance
Ciss
V
DS=
5V, V
GS=
0, f=1MHz
Input Capacitance
V
DS=
5V, V
GS=
0, f=1MHz
Crss
Reverce Transfer Capacitance
g
: The TS788 is classified by I
DSS
as follows : (unit :
碌A(chǔ))
Marking
I
DSS
E4
140 to 240
E5
210 to 350
E6
320 to 500
[Ta=25擄C, VCC=4.5V, RL=1k鈩? CIN=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
Test Circuit
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1k鈩?/div>
Vcc=4.5V
Vcc=1.5V
0.2
min
typ
--3.0
--1.2
max
--3.5
--1.0
unit
dB
dB
dB
m鈩?/div>
鈩?/div>
%
dB
G
V
鈭咷
VV
鈭咷
Vf
Z
IN
Zo
THD
V
NO
V
IN=
10mV, f=1kHz
V
IN=
10mV, f=1kHz
V
CC=
4.5鈫?.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0
, A curve
25
700
1.0
--110
Package Dimensions
SMCP (unit : mm)
0.3
0.8
3
1
1.0
1.6
2
1.6
0.1
0 to 0.1
0.4
15pF
33uF
+
to
OSC
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
971128TM2fXHD
0.6
0.75
VTVM V THD B A
1k鈩?Output Impedance
1 : Drain
2 : Source
3 : Gate
1
