Silicon triple diffused type.
飩?/div>
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
700V
400V
9
0.3
0.5
0.6
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25 C unless otherwise noted
o
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Conditions
I
C
= 10mA, I
B
= 0
I
C
= 1mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
/ I
B
= 200mA / 20mA
I
C
/ I
B
= 100mA / 10mA
V
CE
= 10V, I
C
= 10uA
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 280mA
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 100mA,
I
B1
= I
B2
= 20mA,
R
L
= 125ohm
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
1
h
FE
2
h
FE
3
f
T
Cob
t
ON
t
STG
t
f
Min
700
400
9
--
--
--
--
15
25
12
4
--
--
--
--
Typ
--
--
--
--
--
--
--
--
--
--
--
21
1.1
--
--
Max
--
--
--
10
10
1.5
1.0
40
40
30
--
--
--
4
0.7
Unit
V
V
V
uA
uA
V
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
MHz
pF
碌S
碌S
碌S
Note : pulse test: pulse width <=5mS, duty cycle <=10%
TS13002A
1-2
2004/08 rev. C
1
2
