TS13001
High Voltage NPN Transistor
BV
CEO
= 400V
BV
CBO
= 500V
Ic = 0.1A
V
CE (SAT)
, = 0.5V @ Ic / Ib = 50mA / 10mA
Pin assignment:
1. Emitter
2. Collector
3. Base
Features
High voltage
.
High speed switching
Ordering Information
Part No.
TS13001CT
Packing
Bulk
Package
TO-92
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
500V
400V
9
0.1
0.3
Unit
V
V
V
A
Pulse
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
TO-92
P
D
T
J
T
STG
0.6
+150
- 55 to +150
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Output Capacitance
Storage Time
Fall Time
Conditions
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 500V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
/ I
B
= 50mA / 10mA
V
CE
= 5V, I
C
= 20mA
V
CB
= 10V, f = 0.1MHz
V
CE
= 250V, I
C
= 5 Ib,
Ib1=Ib2=40mA
Symbol
Min
500
400
9
--
--
--
10
--
--
--
Typ
--
--
--
--
--
--
--
4
--
--
Max
--
--
--
100
0.01
0.5
40
--
2.0
0.8
Unit
V
V
V
uA
uA
V
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
Cob
ts
tf
pF
uS
Note : pulse test: pulse width <=5mS, duty cycle <=10%
TS13001
1-2
2003/12 rev. B
1
2
