Single N-Channel 4.5V Specified MicroSurf鈩?/div>
Drain-Source Voltage
20 Volt
Current I
D
12 Ampere
Features
12A, 20V R
DS(ON)
=3.9m鈩?at 4.5Volts
12A, 20V Qg =19.8nC at 4.5Volts
Low profile package: less than 1mm
height when mounted on PCB
Occupies only 1/3 the area of SO-8
Excellent thermal characteristics
High power and current handling
capability
Lead free solder balls available
Description
Taiwan Semiconductor鈥檚 new low cost, state of the
art MicroSurf鈩?lateral MOSFET process technology
in chipscale bondwireless packaging minimizes
PCB space and R
DS(ON)
plus provides an ultra-low
Qg X R
DS(ON)
figure of merit.
Internal Block Diagram
D
Ds
nding
ent Pe
Pat
G
S
Pin Configuration
Standard Application
MicroSurf鈩?for High Frequency
DC-DC Converters
Bottom: Bump Side
Rev. 1 05/2003
-1-