TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM
SLWS059B 鈥?MAY 1997 鈥?REVISED AUGUST 1998
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Single Positive Power Supply (No Negative
Voltage Required)
Advanced Silicon RFMOS鈩?Technology
4.8-V Operation for GSM Applications
35-dBm Typical Output Power
30-dB Typical Power Gain
40% Typical PAE with 5-dBm Input Power
45% Typical PAE with 8-dBm Input Power
Output Power Control
Few External Components Required for
Operation
Thermally Enhanced Surface-Mount
Package for Small Circuit Footprint
Rugged, Sustains 20:1 Load Mismatch
800-MHz to 1000-MHz Wide Operational
Frequency Range
Low Standby Current (< 10
碌A(chǔ))
PWP PACKAGE
(TOP VIEW)
VG2
VG3
VPC
VG1
NC
RFIN
RFIN
NC
VG1
VPC
VG3
VG2
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VD1/VD2
GND
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
GND
VD1/VD2
NC 鈥?No internal connection
description
The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global
systems for mobile communications (GSM). It uses Texas Instruments RFMOS鈩?process and consists of a
three-stage amplifier with output power control. Few external components are required for operation.
The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section
of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF
output port, RFOUT, require simple external matching networks.
A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious
emission specifications for time-division multiple-access (TDMA) systems. The power control signal causes a
change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power
applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of
鈥?43 dBm at VPC = 0 V to a typical value of 35 dBm at VPC = 3 V. Forward isolation with the RF input power
applied to RFIN at 5 dBm, VPC = 0 V, is typically 48 dB.
The TRF7610 is available in a thermally enhanced, surface-mount, 24-pin PowerPAD鈩?(PWP) thin-shrink
small-outline package (TSSOP). It is characterized for operation from 鈥?40擄C to 85擄C operating free-air
temperature. In order to maintain acceptable thermal operating conditions, the device should be operated in
pulse applications such as the GSM standard 1/8 duty cycle. The package has a solderable pad that improves
the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a
low-inductance electrical path to ground and must be electrically connected to the printed circuit-board (PCB)
ground plane as a continuation of the regular package terminals that are designated GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
RFMOS and PowerPAD are trademarks of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1998, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
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