TR8 SERIES
SILICON TRIACS
l
l
l
l
8 A RMS, 70 A Peak
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
TR8-400-70
TR8-600-70
TR8-700-70
TR8-800-70
SYMBOL
VALUE
400
600
700
800
8
70
80
鹵1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
V
DRM
V
Full-cycle RMS on-state current at (or below) 85擄C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85擄C case temperature (pulse width
攏
200
m
s)
Average gate power dissipation at (or below) 85擄C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
A
A
A
A
W
W
擄C
擄C
擄C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85擄C derate linearly to 110擄C case temperature at
the rate of 320 mA/擄C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25擄C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Peak gate trigger
current
V
D
= rated V
DRM
V
supply
= +12 V鈥?/div>
I
GTM
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= +12 V鈥?/div>
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= -12 V鈥?/div>
鈥?All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
I
G
= 0
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
T
C
= 110擄C
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
2
-12
-9
20
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
MIN
TYP
MAX
鹵2
50
-50
-50
mA
UNIT
mA
TR8-600-70相關(guān)型號(hào)PDF文件下載
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SILICON TRIACS
TRSYS
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SILICON TRIACS
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英文版
SILICON TRIACS
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英文版
SILICON TRIACS
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英文版
SILICON TRIACS
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英文版
SILICON TRIACS
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