TR16 SERIES
SILICON TRIACS
l
l
l
l
l
l
High Current Triacs
16 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
125 A Peak Current
Max I
GT
of 50 mA (Quadrants 1 - 3)
Pin 2 is in electrical contact with the mounting base.
TO-220 PACKAGE
(TOP VIEW)
MT1
MT2
G
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TR16-400-125
Repetitive peak off-state voltage (see Note 1)
TR16-600-125
TR16-700-125
TR16-800-125
Full-cycle RMS on-state current at (or below) 70擄C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25擄C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
V
DRM
SYMBOL
VALUE
400
600
700
800
16
125
鹵1
-40 to +110
-40 to +125
230
A
A
A
擄C
擄C
擄C
V
UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70擄C derate linearly to 110擄C case temperature at
the rate of 400 mA/擄C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25擄C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Gate trigger
current
V
D
= rated V
DRM
V
supply
= +12 V鈥?/div>
I
GT
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= +12 V鈥?/div>
V
GT
Gate trigger
voltage
On-state voltage
Holding current
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
T
I
H
I
TM
= 鹵22.5 A
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
TEST CONDITIONS
I
G
= 0
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
I
G
= 50mA
I
G
= 0
I
G
= 0
T
C
= 110擄C
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
(see Note 4)
Init鈥?I
TM
= 100 mA
Init鈥?I
TM
= -100 mA
12
-19
-16
34
0.8
-0.8
-0.8
0.9
鹵1.4
22
-12
2
-2
-2
2
鹵1.7
40
-40
V
mA
V
MIN
TYP
MAX
鹵2
50
-50
-50
mA
UNIT
mA
鈥?All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
p
=
攏
1 ms, duty cycle
攏
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
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