Ruggedness 10:1.
鈥?/div>
Few external components.
Description:
The module incorporates two highly-integrated InGaP power
amplifier die with a CMOS controller. Each amplifier has three
gain stages with on-die interstage matching implemented with
a high Q passives technology for optimal performance. The
CMOS controller implements a fully integrated closed-loop
power control within the module. This eliminates the need for
any external couplers, power detectors, current sensing etc.,
to assure the output power level. The latter is set directly from
the V
ramp
input from the DAC. The module has Tx enable and
band select inputs. Excellent performance is achieved across
the 824 鈥?849 MHz, 880 鈥?915 MHz, 1710 鈥?1785 MHz, and
1850 鈥?1910 MHz bands. Module construction is a low-profile
overmolded land-grid array on laminate.
1.32鹵.10
0.9
鹵
.05
2.4
3.1
3.9
4.5
5.3
5.9
0.9
1.6
9.9
9.1
8.4
7.6
6.9
6.1
5.4
4.6
3.9
3.1
2.4
1.6
0.9
0.1
0,0
1.6
4.0
0.1
6.9
8.5
1.5
DCS/PCS-in
Band select
Tx enable
V batt.
V reg.
V ramp
Cell/GSM in
1
2
3
4
5
6
7
20
Vcc2
19
18
17
16
15
DCS/PCS-out
ASIC
14
13
12
Vcc
8
Vcc2
9
10
11
Cell/GSM out
Dimensions in mm
Copyright 漏 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517)
All specifications subject to change without notice
2