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TQ9147B Datasheet

  • TQ9147B

  • 2-Stage AMPS Power Amplifier IC

  • 10頁(yè)

  • TRIQUINT

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WIRELESS COMMUNICATIONS DIVISION
RF
OUT
GND
GND
GND
GND
RF
IN
GND
V
G1
1
16
RF
OUT
GND
GND
GND
GND
V
G2
GND
V
D1
TQ9147B
DATA SHEET
2
15
3
14
2-Stage AMPS
Power Amplifier IC
4
13
5
12
6
11
Features
摟
High Efficiency
摟
+32 dBm Output Power
摟
50鈩?Matched Input
摟
SO-16 Plastic Package
摟
Monolithic Power Amp
7
10
8
9
Product Description
The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC
intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 -
849 MHz) band. The TQ9147 requires minimal external RF circuitry and operates
from a 4.8-Volt supply. With its flexible, off-chip, single component output matching
circuit, the TQ9147 is suitable for use in other applications near the cellular band,
such as 900 MHz ISM applications.
The TQ9147 utilizes a space saving SO-16 plastic package that minimizes board
area and cost.
Applications
摟
AMPS Mobile Phones
摟
CDPD Modems
摟
General ISM Band Applications
Electrical Specifications
1
Parameter
Output Power
Efficiency
Min
+31.5
55
Typ
+32
60
Max
Units
dBm
%
Note 1: Test Conditions: V
DD
= 4.8 V, P
IN
= +7 dBm,
Freq. = 824 & 849 MHz,
T
C
= 25擄C,
Min/max values 100% production tested.
Electrical Characteristics
For additional information and latest specifications, see our website:
www.triquint.com
1

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