鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TPV8200B
Motorola Preferred Device
190 W, 470 鈥?860 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Quiescent Current (without RF drive)
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
ICQ
Tstg
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Symbol
Min
Typ
Value
30
65
4
20
250
1.43
2 x 500
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
mAdc
擄C
THERMAL CHARACTERISTICS
Max
0.7
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 20 mAdc, IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 20 mAdc, IC = 0)
Collector鈥揈mitter Leakage Current (VCE = 28 Vdc, RBE = 75
鈩?
NOTE:
1. Thermal resistance is determined under specific RF condition.
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICER
30
65
4
鈥?/div>
35
80
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TPV8200B
1
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