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TPV8100B Datasheet

  • TPV8100B

  • NPN SILICON RF POWER TRANSISTOR

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TPV8100B/D
NPN Silicon
RF Power Transistor
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
鈥?/div>
To be used class AB for TV band IV and V.
鈥?/div>
Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
鈥?/div>
Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TPV8100B
150 W, 470 鈥?860 MHz
NPN SILICON
RF POWER TRANSISTOR
CASE 398鈥?3, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous
Total Device Dissipation @ 25擄C Case
Derate above 25擄C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCER
VCBO
VEBO
IC
PD
TJ
Tstg
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Value
40
65
4
12
215
1.25
200
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
0.8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mA, Rbe = 75
鈩?
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mAdc)
Collector鈥揃ase Breakdown Voltage
(IE = 20 mAdc)
Collector鈥揈mitter Leakage
(VCE = 28 V, Rbe = 75
鈩?
V(BR)CER
V(BR)EBO
V(BR)CBO
ICER
30
4
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
mA
(continued)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TPV8100B
1

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