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TPV596A Datasheet

  • TPV596A

  • UHF LINEAR POWER TRANSISTOR

  • 4頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TPV596A/D
UHF Linear Power Transistor
. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and
500 mW Band V TV transposer stages. Gold metallization and diffused emitter
ballast resistors are used to enhanced reliability, ruggedness and linearity.
鈥?/div>
Band IV and V (470鈥?860 MHz)
鈥?/div>
0.5 W 鈥?Pref @ 鈥?58 dB IMD
鈥?/div>
High Gain 鈥?12 dB Typ, Class A, f = 860 MHz
鈥?/div>
Gold Metallization for Reliability
TPV596A
0.5 W, 470 鈥?860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
Tstg
Value
24
45
3.5
0.7
8.75
0.05
200
鈥?65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
CASE 244鈥?4, STYLE 1
(.280 SOE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70擄C)
Symbol
R
胃JC
Max
20
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mA, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 4.0 mA, IC = 0)
Emitter鈥揃ase Leakage Current
(VEB = 2.0 V)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mA, RBE = 10
鈩?
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
V(BR)CER
24
45
3.5
鈥?/div>
鈥?/div>
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.25
1.0
鈥?/div>
Vdc
Vdc
Vdc
mA
mAdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
hFE
15
鈥?/div>
120
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Cob
鈥?/div>
鈥?/div>
5.0
pF
(continued)
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TPV596A
1

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