TPR 1000
1000 Watts, 45 Volts, Pulsed
Avionics 1090 MHz
GENERAL DESCRIPTION
The TPR 1000 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1090 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input returns for
fast rise time.
Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55KV, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
2900 Watts
65 Volts
3.5 Volts
80 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
t
r
VSWR
1
Bvebo
3,4
BVces
4
h
FE4
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
TEST CONDITIONS
F = 1090 MHz
Vcc = 45 Volts
PW = 10
碌sec
DF = 1%
F = 1030 MHz
Ie = 50mA
Ic = 100mA
Ic = 1000mA, Vce = 5 V
3.5
65
10
0.06
MIN
1000
250
6.0
43
70
9:1
TYP
MAX
UNITS
Watts
Watts
dB
%
ns
Volts
Volts
o
胃jc
2
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
4: Per Side
Issue A June 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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