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TPCS8212 Datasheet

  • TPCS8212

  • Silicon N Channel MOS Type (U-MOSIII)

  • 7頁

  • TOSHIBA

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TPCS8212
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 16 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 碌A(chǔ) (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 碌A(chǔ))
Common drain
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
20
20
鹵12
6
24
1.1
Unit
V
V
V
A
Drain power
dissipation
Single-device value
(t
=
10 s)
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device value
(t
=
10 s)
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Single-device
operation (Note 3a)
Single-device
operation (Note 3a)
JEDEC
JEITA
TOSHIBA
W
鈥?/div>
鈥?/div>
2-3R1E
0.75
Weight: 0.035 g (typ.)
0.6
Circuit Configuration
0.35
8
46.8
6
0.075
150
鈭?5~150
mJ
A
mJ
擄C
擄C
1
2
3
4
7
6
5
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-01-17

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