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TPCS8201 Datasheet

  • TPCS8201

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

  • 7頁

  • TOSHIBA

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TPCS8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8201
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l
l
l
l
l
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 22 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| =
13
S (typ.)
Low leakage current: I
DSS
=
10
碌A(chǔ) (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5~1.2 V (V
DS
=
10
V, I
D
= 200 碌A(chǔ))
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20k惟)
Gate-source voltage
Drain curren
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
Rating
20
20
鹵12
5
20
1.1
W
P
D(2)
0.75
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3R1E
Drain power
dissipation
(t = 10s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
(t = 10s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Single-device
operation
(Note 3a)
Single-device
operation
(Note 3a)
Weight: 0.035 g (typ.)
P
D (1)
0.6
W
Circuit Configuration
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
0.35
32.5
5
0.075
150
鈭?5~150
mJ
A
mJ
擄C
擄C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2003-02-20

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