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2-3R1B
Drain power dissipation
Drain power dissipation
Weight: 0.035 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-05-17