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TPCS8004 Datasheet

  • TPCS8004

  • Silicon N Channel MOS Type (Pi-MOSV)

  • 7頁

  • TOSHIBA

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TPCS8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSV)
TPCS8004
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 0.56
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 1.8 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 200 V)
Enhancement model: V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
200
200
鹵20
1.3
5.2
1.5
W
0.6
1.05
1.3
0.15
150
鈭?5~150
mJ
A
mJ
擄C
擄C
8
7
6
5
Unit
V
V
V
A
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3R1B
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy(Note3)
Avalanche current
Repetitive avalanche energy
(Note2a, Note 4)
Channel temperature
Storage temperature range
Weight: 0.035 g (typ.)
Circuit Configuration
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
4
1
2004-07-06

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