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TPCP8H02 Datasheet

  • TPCP8H02

  • TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Fi...

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  • TOSHIBA

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TPCP8H02
TOSHIBA Multi-Chip Transistor
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
TPCP8H02
2.4鹵0.1
0.475
1
4
銉籑ulti-chip
discrete device; built-in NPN transistor for main switch and
N-ch MOS FET for drive
銉籋igh
DC current gain: h
FE
= 250 to 400 (I
C
= 0.3 A) (NPN transistor)
銉籐ow
collector-emitter saturation voltage: V
CE (sat)
= 0.14 V (max)
(NPN transistor)
銉籋igh-speed
switching: t
f
= 25 ns (typ.) (NPN transistor)
0.65
2.9鹵0.1
B
A
0.05
M
B
0.8鹵0.05
S
0.025
S
0.17鹵0.02
0.28
+0.1
-0.11
+0.13
Absolute Maximum Ratings
(Ta
=
25擄C)
Transistor
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
(NPN)
DC
(Note 1)
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note 2)
T
j
Rating
50
50
30
6
3.0
5.0
0.3
1.0
150
Unit
V
V
V
A
A
W
擄C
1. SOURCE
2. COLLECTOR
3. COLLECTOR
4. COLLECTOR
1.12
-0.12
1.12
+0.13
-0.12
0.28
+0.1
-0.11
5. BASE
6. EMITTER
7. GATE
8. DRAIN
JEDEC
JEITA
TOSHIBA
-
-
2-3V1E
Pulse (Note 1)
Circuit Configuration
8
7
6
5
MOS FET
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Channel Temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
T
ch
Rating
20
鹵10
100
200
150
Unit
V
V
1
mA
擄C
2
3
4
Note 1: Ensure that the junction (channel) temperature does not exceed 150鈩?
Note 2: Device mounted on a glass-epoxy board (FR-4,25.4脳25.4脳1.6 mm , Cu area: 645 mm
2
)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-13
2.8鹵0.1
STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS
0.33鹵0.05
0.05
M
A
8
5

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