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Weight: 0.017 g (typ.)
Circuit Configuration
8
7
6
5
Single-device operation
(Note 3a)
Single-device value at
dual operation(Note 3b)
Single-device operation
(Note 3a)
Single-device value at
dual operation(Note 3b)
Single pulse avalanche energy(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
1
2
3
4
Marking (Note 6)
mJ
擄C
擄C
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
8402
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