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TPCF8102 Datasheet

  • TPCF8102

  • Field Effect Transistor Silicon P Channel MOS Type (U-MOS II...

  • 225.17KB

  • 7頁

  • TOSHIBA

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TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
III)
TPCF8102
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 24 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 14 S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
Enhancement mode: V
th
=
鈭?.5
to
鈭?.2
V
(V
DS
=
鈭?0
V, I
D
=
鈭?00
碌A(chǔ))
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
(Note 4)
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵8
鈭?
鈭?4
2.5
0.7
5.9
鈭?
0.25
150
鈭?5~150
Unit
V
V
V
A
W
W
mJ
A
mJ
擄C
擄C
Pulsed (Note 1)
(t
=
5 s)
(Note 2a)
(t
=
5 s)
(Note 2b)
Drain power dissipation
Drain power dissipation
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3U1A
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Weight: 0.011 g (typ.)
Circuit Configuration
8
7
6
5
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2a)
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
50.0
178.6
Unit
擄C/W
擄C/W
1
2
3
4
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06

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