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TPCA8103 Datasheet

  • TPCA8103

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

  • 7頁

  • TOSHIBA

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TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS鈪?
TPCA8103
0.5鹵0.1
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
6.0鹵0.3
Unit: mm
1.27
8
0.4鹵0.1
5
0.05 M A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 3.1 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| =45S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A (max) (V
DS
=
鈭?0
V)
Enhancement mode: V
th
=
鈭?.8
to
鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
5.0鹵0.2
0.15鹵0.05
1
0.95鹵0.05
4
0.595
A
5.0鹵0.2
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
(Tc=25擄C) (Note 4)
Channel temperature
Storage temperature range
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?/div>
40
鈭?20
45
2.8
Unit
V
V
V
A
W
W
S
1
4
0.6鹵0.1
4.25鹵0.2
8
1,2,3錛歋OURCE
4錛欸ATE
5,6,7,8錛欴RAIN
5 0.8鹵0.1
Pulsed (Note 1)
(Tc=25擄C)
(t
=
10 s)
(Note 2a)
(t
=
10 s)
(Note 2b)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-5Q1A
Drain power dissipation
Drain power dissipation
Drain power dissipation
Weight: 0.076 g (typ.)
1.6
W
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
208
鈭?/div>
40
4.5
150
鈭?5
to 150
mJ
A
mJ
擄C
擄C
Circuit Configuration
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2
3
3.5鹵0.2
1.1鹵0.2
0.05 S
0.166鹵0.05
4
1
2004-01-16

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