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TPC8403 Datasheet

  • TPC8403

  • Field Effect Transistor Silicon P/N Channel MOS Type (P Chan...

  • 11頁

  • TOSHIBA

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TPC8403
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
P Channel R
DS (ON)
= 45 m鈩?(typ.)
N Channel R
DS (ON)
= 25 m鈩?(typ.)
High forward transfer admittance: P Channel |Y
fs
| = 6.2 S (typ.)
N Channel |Y
fs
| = 7.8 S (typ.)
Low leakage current:
P Channel I
DSS
=
鈭?0
碌A(chǔ) (V
DS
=
鈭?0
V)
N Channel I
DSS
= 10 碌A(chǔ) (V
DS
= 30 V)
Low drain-source ON resistance:
Unit: mm
Enhancement mode
: P Channel V
th
=
鈭?.0~鈭?.2
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
: N Channel V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
P Channel N Channel
鈭?0
鈭?0
鹵20
鈭?.5
鈭?8
1.5
1.1
0.75
0.45
26.3
(Note 4a)
鈭?.5
0.11
150
鈭?5~150
30
30
鹵20
6
24
1.5
1.1
W
0.75
0.45
46.8
(Note 4b)
6
mJ
A
mJ
擄C
擄C
1
2
N-ch
3
4
P-ch
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1E
Weight: 0.080 g (typ.)
Drain power Single-device operation
(Note 3a)
dissipation
(t
=
10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t
=
10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Circuit Configuration
8
7
6
5
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06

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