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TPC8401 Datasheet

  • TPC8401

  • TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Typ...

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  • TOSHIBA

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TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U鈭扢OSII)
TPC8401
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs
Low drain鈭抯ource ON resistance
: P Channel R
DS (ON)
= 27 m鈩?(typ.)
N Channel R
DS (ON)
=
14
m鈩?(typ.)
High forward transfer admittance
: P Channel |Y
fs
| = 7 S (typ.)
N Channel |Y
fs
| = 8 S (typ.)
Low leakage current
: P Channel I
DSS
=
鈭?0
碌A(chǔ) (V
DS
=
鈭?0
V)
N Channel I
DSS
=
10
碌A(chǔ) (V
DS
= 30 V)
Enhancement鈭抦ode
: P Channel V
th
=
鈭?.8~ 鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?mA)
N Channel V
th
= 0.8~2.5 V (V
DS
=
10
V, I
D
=
1mA)
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
P Channel N Channel
鈭?0
鈭?0
鹵20
鈭?.5
鈭?8
1.5
1.0
0.75
0.45
26.3
(Note 4a)
鈭?.5
0.10
150
鈭?5~150
30
30
鹵20
6
24
1.5
1.0
W
0.75
0.45
46.8
(Note 4b)
6
mJ
A
mJ
擄C
擄C
Unit
JEDEC
V
V
V
A
鈥?/div>
鈥?/div>
2-6J1E
JEITA
TOSHIBA
Weight: 0.080 g (typ.)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-17

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