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TPC8302 Datasheet

  • TPC8302

  • Silicon P Channel MOS Type (L2−MOSVI)

  • 7頁(yè)

  • TOSHIBA

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TPC8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
鈭捪€鈭扢OSVI)
2
TPC8302
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
2.5 V Gate drive
Small footprint due to small and thin package
Low drain鈭抯ource ON resistance: R
DS (ON)
=
100
m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 5 S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
Enhancement鈭抦ode: V
th
=
鈭?.5~ 鈭?.1
V (V
DS
=
鈭?0
V, I
D
=
鈭?00
碌A(chǔ))
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D 2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵12
鈭?.5
鈭?4
1.5
W
1.0
0.75
W
0.45
16
鈭?.5
0.1
150
鈭?5鈭?50
mJ
A
mJ
鈩?/div>
鈩?/div>
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1E
Single-device
Drain power
operation (Note 3a)
dissipation
Single-devece value
(t = 10s)
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
Single-devece value
(t = 10s)
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-17

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