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TPC8206 Datasheet

  • TPC8206

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

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  • TOSHIBA

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TPC8206
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
路
路
路
路
路
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 40 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 7.0 S (typ.)
Low leakage current: I
DSS
=
10
碌A (max) (V
DS
= 60 V)
Enhancement-mode: V
th
=
1.3
to 2.5 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
Drain power
dissipation
(t
=
10 s)
(Note 2a)
Drain power
dissipation
(t
=
10 s)
(Note 2b)
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
60
60
鹵20
5
20
1.5
W
1.0
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1E
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Weight: 0.080 g (typ.)
0.75
W
0.45
Circuit Configuration
8
7
6
5
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
92
5
0.1
150
-55
to 150
mJ
A
mJ
擄C
擄C
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-18

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