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TPC8204 Datasheet

  • TPC8204

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

  • 7頁

  • TOSHIBA

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TPC8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U鈭扢OSII)
TPC8204
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l
Small footprint due to small and thin package
l
Low drain鈭抯ource ON resistance
l
Low leakage current
l
Enhancement鈭抦ode
: R
DS (ON)
=
16
m鈩?(typ.)
l
High forward transfer admittance : |Y
fs
| =
18
S (typ.)
: I
DSS
=
10
碌A(chǔ) (max) (V
DS
= 20 V)
: V
th
= 0.5~1.2 V (V
DS
=
10
V, I
D
= 200 碌A(chǔ))
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20k惟)
Gate-source voltage
Drain curren
DC
Pulse
Single-device
operation
(Note 3a)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
Rating
20
20
鹵12
6
24
1.5
W
P
D(2)
1.1
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1E
Drain power
dissipation
(t = 10s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
(t = 10s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
(Note 1)
Single-device
operation
(Note 3a)
Weight: 0.080 g (typ.)
Circuit Configuration
P
D (1)
0.75
W
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
0.45
46.8
6
0.1
150
鈭?5~150
mJ
A
mJ
擄C
擄C
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-18

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